May 14, 2022

Onsemi – New device offers 60% smaller packaging, improved performance and reduced waste

PHOENIX – onsemi (Nasdaq: ON), a leader in smart power and sensing technologies, today announced the world’s first silicon carbide (SiC) MOSFET in TO-Leadless (TOLL) package at PCIM Europe. The transistor addresses the growing need for high performance switching devices suitable for designs with high levels of power density. Until recently, SiC devices were supplied in 7-pin D2PAK packages which required much more space.

With a footprint of just 9.90mm x 11.68mm, the TOLL package offers 30% savings in PCB area compared to a D2PAK package. And with a profile of only 2.30 mm, it occupies 60% less volume than a D2PAK case.

In addition to its smaller size, the TOLL package offers better thermal performance and lower package inductance (2 nH) than a 7-lead D2PAK. Its Kelvin source configuration ensures lower gate noise and switching losses, including a 60% reduction in on-state loss (EON) compared to a device without a Kelvin configuration, ensuring significant improvements in power consumption. efficiency and power density in challenging power designs. like improved EMI and easier PCB design.

“The ability to deliver highly reliable power supply designs in a small space is becoming a competitive advantage in many areas, including high performance industrial power supplies and server applications,” said Asif Jakwani, senior vice president and general manager, Advanced Power Division, onsemi. “Packaging our best SiC MOSFETs in the TOLL package not only saves space, but also improves performance in many areas such as EMI and reduces losses. The result is an extremely reliable and rugged high-performance switching device that will help power supply designers meet their power supply design challenges.

SiC devices offer significant advantages over their silicon predecessors, including increased efficiency at high frequencies, lower EMI, operation at higher temperatures, and greater reliability. onsemi is the only silicon carbide solution provider with vertical integration capability, including SiC ball growth, substrate, epitaxy, device fabrication, best-in-class integrated modules and solutions discrete boxes.

The first SiC MOSFET to be offered in the TOLL package is the TBL045N065SC1 which is intended for demanding applications including switch mode power supplies (SMPS), server and telecommunications power supplies, solar inverters, uninterruptible power supplies (UPS) and the energy storage. The device is suitable for designs that must meet the most demanding efficiency standards, including ErP and 80 PLUS Titanium.

The NTBL045N065SC1 has a VDSS rating of 650 V with a typical RDS(on) of only 33 m? and a maximum drain current (ID) of 73 A. Based on wide bandgap (WBG) SiC technology, the device has a maximum operating temperature of 175 degrees C and an ultra-low gate charge (QG (tot ) = 105 nC) which significantly reduces switching losses. Additionally, the TOLL package is rated MSL 1 (Moisture Sensitivity Level 1) – and guaranteed – to ensure failure rates in mass production are reduced.

Additionally, onsemi offers automotive-grade devices with 3-wire, 4-wire TO-247 and 7-wire D2PAK packages.

About Onsemi

onsemi (Nasdaq: ON) is driving disruptive innovation to help build a better future. With a focus on automotive and industrial end markets, the company is accelerating the evolution of megatrends such as vehicle electrification and safety, sustainable energy networks, industrial automation and 5G infrastructure and cloud. With a highly differentiated and innovative product portfolio, onsemi creates smart power and sensing technologies that solve the world’s most complex challenges and pave the way to creating a safer, cleaner and smarter world.

onsemi and the onsemi logo are registered trademarks of Semiconductor Component Industries, LLC. All other brand and product names appearing in this document are registered trademarks or trademarks of their respective holders. Although the Company refers to its website in this press release, information about the website should not be incorporated herein.